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Thread: Memory Timings Explained W/ Suggested Timings & Memset VS. BIOS

  1. #221
    Lsdmeasap's Avatar
    Lsdmeasap is offline GIGABYTE Guru
    Join Date
    Jan 2008
    PCB Island

    Default Re: Memory Timings Explained W/ Suggested Timings & Memset VS. BIOS

    That guide should be fine! If you are unsure about it, maybe try one of the Guides in our sticky here by Miahallen
    Gulftown, Bloomfield, Lynnfield, Clarkdale, SB Overclocking Guides (1155/1156/1366)

    For that memory you can set XMP and it will all be set automatically for you. I would suggest you update to the latest BIOS before you get started though, and then flash the backup BIOS to match the main using ALT+F12 at bootup (See Video Here)

  2. #222
    Join Date
    Jul 2011
    New Brunswick

    Default Re: Memory Timings Explained W/ Suggested Timings & Memset VS. BIOS

    Thank you for the reply. I will read on all the articles you linked before I overclock. I have a few quick questions.

    1) isn't going from 3.33 to 4.5 a big jump? is it normal or is it kind of high risk?

    2) I have read about XMP for the RAM, but for some reason it is not one of the options in the BIO. I am using F4 for P67A-UD4-B3, and it is not there. Does different RAM stick unlock that option? or is there anything I need to do to get it to show up? I know once I see it, I can just change it to profile 1, but it is simply not on there... Perhaps I will just wait for the new sticks to come here and see if the option becomes available.

    3) Is it necessary to use AHCI instead of IDE for the harddisk? It is mentioned in the guide but I am not sure if it is just preference or it is a necessity.

    Thank you.

  3. #223
    Join Date
    Sep 2011

    Default Re: Memory Timings Explained W/ Suggested Timings & Memset VS. BIOS

    I see the P45 Advanced Timing Control is different. The timing options order is the same without some of the nomenclature but Channel A and B have more adjustments. ???

  4. #224
    Pschalk is offline Junior Member
    Join Date
    May 2016
    Topeka, Ks USA

    Default Re: Memory Timings Explained W/ Suggested Timings & Memset VS. BIOS

    Quote Originally Posted by Lsdmeasap View Post
    First of all the basics

    Rated Memory Timings

    • CAS (tCL) Timing: CAS stands for Column Address Strobe or Column Address Select. It controls the amount of time in cycles between sending a reading command and the time to act on it. From the beginning of the CAS to the end of the CAS is the latency. The lower the time of these in cycles, the higher the memory performance.
      e.g.: 4-4-4-12 The bold “4” is the CAS timing.
    • tRCD Timing: RAS to CAS Delay (Row Address Strobe/Select to Column Address Strobe/Select). Is the amount of time in cycles for issuing an active command and the read/write commands.
      e.g.: 4-4-4-12 The bold “4” is the tRCD timing.
    • tRP Timing: Row Precharge Time. This is the minimum time between active commands and the read/writes of the next bank on the memory module.
      e.g.: 4-4-4-12 The bold “4” is the tRP timing.
    • tRAS Timing: Min RAS Active Time. The amount of time between a row being activated by precharge and deactivated. A row cannot be deactivated until tRAS has completed. The lower this is, the faster the performance, but if it is set too low, it can cause data corruption by deactivating the row too soon.
      tRAS = tCL + tRCD + tRP (+/- 1) so that it gives everything enough time before closing the bank.

      e.g.: 4-4-4-12 The bold “12” is the tRAS timing.

    (The 4-4-4-12 figure is just an example for main memory timings.)

    These are the four timings that you would see when memory is being rated. It is in the order of CAS-tRCD-tRP-tRAS. The lower these timings, the higher the performance of the memory. Some motherboard manufacturers (DFI for example) list the timings in their bios CAS-tRCD-tRAS-tRP.

    Certain memories can take tighter (lower) timings at higher speeds. These are the more expensive memory modules out of the bunch. There are also other timings to consider in your BIOS. Not all boards will have options like these.

    Advanced Memory Timings

    • tRRD Timing: (Act to Act Delay) Row to Row Delay or RAS to RAS Delay. The amount of cycles that it takes to activate the next bank of memory. It is the opposite of tRAS. The lower the timing, the better the performance, but it can cause instability.
    • tWTR Timing: (Rank Write To Read Delay) Write to Read Delay. The amount of cycles required between a valid write command and the next read command. Lower is better performance, but can cause instability.
    • tWR Timing: (Write To Precharge Delay)Write Recovery Time. The amount of cycles that are required after a valid write operation and precharge. This is to insure that data is written properly.
    • tRFC Timing: (Refresh To Act Delay) Row Refresh Cycle Timing. This determines the amount of cycles to refresh a row on a memory bank. If this is set too short it can cause corruption of data and if it is too high, it will cause a loss in performance, but increased stability.
    • tRTP Timing: (Read To Precharge Delay) Number of clocks that are inserted between a read command to a row pre-charge command to the same rank.

      Below Values are not in ALL BIOS's (See Below link for a FULL List of Values)
    • tRTW/tRWT Timing: Read to Write Delay. When a write command is received, this is the amount of cycles for the command to be executed.
    • tRC Timing: Row Cycle Time. The minimum time in cycles it takes a row to complete a full cycle. This can be determined by; tRC = tRAS + tRP. If this is set too short it can cause corruption of data and if it is to high, it will cause a loss in performance, but increase stability.
    • tREF Timing: The amount of time it takes before a charge is refreshed so it does not lose its charge and corrupt. Measured in micro-seconds (µsec).
    • tWCL Timing: Write CAS number. Write to whatever bank is open to be written too. Operates at a rate of 1T, but can be set to others. It does not seem to work with other settings than 1T on DDR. DDR2 is different though.
    • Command Rate: Also called CPC (Command Per Clock). The amount of time in cycles when the chip select is executed and the commands can be issued. The lower (1T) the faster the performance, but 2T is used to maintain system stability. On Intel based machines, 1T is always used where the number of banks per channel are limited to 4.
    • Static tREAD Value: (tRD) This setting is most commonly known as Performance Level or tRD this is the most effective chipset performance register available to adjustment. As FSB and memory speed are scaled/increased, tRD and Northbridge voltage will have to be increased to accommodate the additional data throughput. The idea when tweaking your system for the BEST performance is to run the tightest (Lowest) tRD possible at any given FSB or memory speed. See Below Link for more reading on this

    Full List of Most All BIOS Memory Values

    Some are covered here and some are not as they are not relevant to Most Gigabyte boards


    CAS-tRCD-tRP-tRAS are the main timings that are of concern to most users.

    All of the other settings are only really changed when overclocking, or tweaking your timings. If you plan to stay at stock frequencies and timings, there is no real need to play with the other advanced memory settings.

    Ram Multiplier Calculator

    MemSet VS. BIOS Settings (Download Linked Below)

    Suggested Settings for P35/P45 Boards

    Performance Enhance
    ________________ Standard

    CAS Latency Time________________ 4/5
    Dram RAS# to CAS# Delay_________ 4/5
    Dram RAS# Precharge Delay________4/5
    Precharge Delay (tRAS)___________ 12/15/18

    The above ranges will be dependent upon your ram spec which should be listed on the package or sticker of your ram

    The ranges below are meant to be used as stable stock timings that can be latter tested and lowered one by one with testing between each move.

    The timings x2 in ()'s below are to be tested last only for benchmark purposes.

    And just so everyone is clear on this the latter one being Static tRead Value May HARD FAIL for most all users and often cause a need to Clear CMOS if you attempt to use 5/6, but some will get it to work and it is worth the time and effort if you are into tweaking your ram to at least try it a few times. If you do decide to try it then please have the other subtimings loose when you first attempt it

    Memtest86+ is suggested for memory testing (Download Linked Below)

    ACT to ACT Delay (tRRD)________ 3-4
    Rank Write to READ Delay (tWTR)_______ (4-6) 9-11 (Note Actual Value set in BIOS Vs. What system Uses will be 7+)
    Write to Precharge Delay (tWR)________ 3-5 (Note Actual Value set in BIOS Vs. What system Uses will be 5+)
    Refresh to ACT Delay (tRFC)___________ 38-42 (2X1GB) 52-62+ (2x2GB)
    Read to Precharge Delay (tRTP)_________ 3-6 (Note Actual Value set in BIOS Vs. What system Uses will be 2+)
    Static tRead Value (tRD)______________ (5/6) 7-10 (800Mhz) 7-12 (1066Mhz)
    Static tRead Phase Adjust________ 1-31*

    * Pertaining to Static tRead Phase Adjust: Leave on Auto or Zero Or 1-31 (This Adjustment is uncontrolled and subtracts from the Static tRead Value at random times and is suggested to not be used unless you really know what you are doing. For more in depth read about this setting you can have a look here >>>
    AnandTech: The Gigabyte GA-X48T-DQ6 - Redefining the High End?

    Also Some in depth Static tRead Value (tRD) discussion here as well
    AnandTech: ASUS ROG Rampage Formula: Why we were wrong about the Intel X48

    is there such a thibng as tinkering too much?

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